上海交通大学材料基因组联合研究中心 (MaGIC) 特邀讲座
Topic: Understanding the Structure and Fast Reversible Phase Transition of Chalcogenide Materials for Data Storage(相变存储材料结构与可逆相变机理的理论研究)
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Lecturer: Prof. Zhimei Sun (孙志梅)
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北京航空航天大学
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Venue: 材料学院A500姚征报告厅
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September 27th 10:00-11:00
Chalcogenide semiconductors such as Ge2Sb2Te5 have been used in optical data storage since 1990s, and are currently investigated for the application in phase-change random access memory (PRAM), which is considered as the most promising next-generation non-volatile memory. This talk will present our understanding of both the crystalline and amorphous structures as well as the microscopic mechanisms of the fast reversible phase transition of chalcogenide phase-change materials on the basis of ab initio calculations and ab initio molecular dynamics simulations.